• DocumentCode
    800465
  • Title

    2×2 InGaAsP/InP laser amplifier gate switch arrays using reactive ion etching

  • Author

    Oh, Kwan Ryong ; Ahn, Joo-Heon ; Kim, Jeong Soo ; Lee, Seung Won ; Kim, Hong Man ; Pyun, Kwang Eui ; Park, Hyang Moo

  • Author_Institution
    Optoelectron. Section, Electron. & Telecommun. Res. Inst., Taejon, South Korea
  • Volume
    32
  • Issue
    1
  • fYear
    1996
  • fDate
    1/4/1996 12:00:00 AM
  • Firstpage
    39
  • Lastpage
    40
  • Abstract
    Waveguide integrated 2×2 InGaAsP laser amplifier gate switch arrays were fabricated using MOVPE and RIE. For the first time, RIE was applied as an etching process for the butt-coupling of the amplifier and the waveguide. A very low fibre-to-fibre loss of 1.2 dB was obtained, and the on/off extinction ratio exceeded 42 dB
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical fibre couplers; optical fibre losses; optical fibre subscriber loops; optical planar waveguides; photonic switching systems; semiconductor growth; semiconductor laser arrays; sputter etching; vapour phase epitaxial growth; 1.2 dB; InGaAsP-InP; MOVPE; access networks; butt-coupling; fibre-to-fibre loss; laser amplifier gate switch arrays; on/off extinction ratio; photonic space switch arrays; reactive ion etching; waveguide integrated switch arrays;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960054
  • Filename
    490716
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=800465