DocumentCode
800723
Title
Very high density RF MIM capacitors (17 fF/μm2) using high-/spl kappa/ Al2O3 doped Ta2O5 dielectrics
Author
Yang, Michael Ying ; Huang, C.H. ; Chin, Alvin ; Chunxiang Zhu ; Cho, Byung Jin ; Li, M.F. ; Dim-Lee Kwong
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
13
Issue
10
fYear
2003
Firstpage
431
Lastpage
433
Abstract
Using high-/spl kappa/ Al2O3 doped Ta2O5 dielectric, we have obtained record high MIM capacitance density of 17 fF/μm2 at 100 kHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9×10/sup -7/ A/cm2. In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2×10/sup -12/ A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-μm MOSFET. This very high capacitance density with good MIM capacitor characteristics can significantly reduce the chip size of RF ICs.
Keywords
MIM devices; capacitance; leakage currents; radiofrequency integrated circuits; tantalum compounds; 10 pF; 100 kHz; MIM capacitance density; RF IC; RF MIM capacitors; RF frequency range; Ta/sub 2/O/sub 5/:Al/sub 2/O/sub 3/; chip size; high-/spl kappa/ Al/sub 2/O/sub 3/ doped Ta/sub 2/O/sub 5/ dielectrics; leakage current density; Capacitance; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; MIM capacitors; Radio frequency; Radiofrequency integrated circuits; Transmission line measurements; Very large scale integration;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2003.818532
Filename
1235967
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