DocumentCode :
800788
Title :
A new empirical nonlinear model for sub-250 nm channel MOSFET
Author :
Siligaris, Alexandre ; Dambrine, Gilles ; Schreurs, Dominique ; Danneville, François
Author_Institution :
IEMN CNRS UMR, Villeneuve d´´Ascq, France
Volume :
13
Issue :
10
fYear :
2003
Firstpage :
449
Lastpage :
451
Abstract :
An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge conservation is taken into account, as the capacitances derive from a single charge expression. The model´s parameters are first extracted, prior the model´s implementation into a circuit simulator. It is validated through dc, ac, and RF large signal measurements compared to the simulation.
Keywords :
MOSFET; UHF field effect transistors; microwave field effect transistors; semiconductor device models; MOSFET; RF measurements; analytical drain current formulations; capacitances; channel length; charge conservation; circuit simulator; empirical nonlinear model; gate charge formulations; large signal RF circuit simulation; Capacitance; Circuit simulation; Data mining; Equations; MOS devices; MOSFET circuits; RF signals; Radio frequency; Table lookup; Voltage;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2003.815687
Filename :
1235973
Link To Document :
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