DocumentCode :
800879
Title :
Removing the effects of baseband impedance on distortion in FET amplifiers
Author :
Richards, A. ; Morris, K.A. ; McGeehan, J.P.
Author_Institution :
Centre for Commun. Res., Univ. of Bristol
Volume :
153
Issue :
5
fYear :
2006
Firstpage :
401
Lastpage :
406
Abstract :
The baseband drain node impedance of FETs has previously been found to influence the distortion produced by amplifiers employing such devices. For a two tone test, variations in this impedance lead to variations in the magnitude and phase of the intermodulation distortion products. This results in distortion characteristics which vary with tone separation, and consequently limits the performance of many linearisation schemes. A scheme capable of removing the dependency of intermodulation distortion on baseband drain node impedance is presented, and operates over a bandwidth of 30 MHz. Practical tests conducted on a real amplifier subjected to a two tone input signal show that the scheme can suppress phase asymmetry variations of up to 70deg
Keywords :
amplifiers; field effect transistor circuits; intermodulation distortion; linearisation techniques; 30 MHz; FET amplifiers; baseband drain node impedance; baseband impedance; intermodulation distortion; linearisation schemes;
fLanguage :
English
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings
Publisher :
iet
ISSN :
1350-2417
Type :
jour
DOI :
10.1049/ip-map:20060005
Filename :
1717265
Link To Document :
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