2-4 GHz wideband power amplifier with ultra-flat gain and high PAE

Author

Ding, Xuemei ; He, Shunfan ; You, Fei ; Xie, Shengli ; Hu, Zongyang

Author_Institution

Dept. of Electr. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

49

Issue

5

fYear

2013

fDate

February 28 2013

Firstpage

326

Lastpage

327

Abstract

Demonstrated is a 2-4 GHz wideband power amplifier (WPA) using Cree 10 W GaN HEMT CGH40010. Also a novel process to find the optimum impedances is presented, with which the gain flatness can be taken into account. A compact PCB has been fabricated and tested with continuous waves at low (20 dBm) and high (28 dBm) input power level. From the measured results, at low power level, the gain is 13.1-14.1 dB across 2.0-3.9 GHz and 12.3-14.1 dB across 2.0-4.0 GHz. For large signals, power gain is 11.1-12.6 dB with power-added efficiency (PAE) 36.5-53.4% while output power is around 40 dBm. Gain flatness keeps less than 1 dB beyond 95% of the band. For a 5 MHz WCDMA signal, the adjacent channel leakage ratio of the WPA with digital predistortion reaches - 45.3 dBc with an average drain efficiency of 46.7%.

Keywords

channel allocation; code division multiple access; high electron mobility transistors; power amplifiers; printed circuits; wideband amplifiers; ACLR; DPD; HEMT; WCDMA signal; WPA; adjacent channel leakage ratio; compact PCB; continuous waves; digital predistortion; drain efficiency; frequency 2 GHz to 4 GHz; gain 12.3 dB to 14.1 dB; gain flatness; high PAE; input power level; optimum impedances; power 10 W; power gain; power-added efficiency; ultra-flat gain; wideband power amplifier;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.4135

Filename

6473937