Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Author

Weifeng Zhou ; Liang Zhou ; Liang Lin ; Wen-Yan Yin ; Jun-Fa Mao

Author_Institution

Key Lab. of Minist. of Educ. of Design & Electromagn. Compatibility of High-Speed Electron. Syst., Shanghai Jiao Tong Univ., Shanghai, China

Volume

56

Issue

5

fYear

2014

fDate

Oct. 2014

Firstpage

1178

Lastpage

1184

Abstract

This paper studies the coupled electrothermal-stress interaction mechanisms of a laterally diffused metal oxide semiconductor field effect transistor under direct current injection radio frequency pulses. Based on the measured threshold breakdown power in the high power microwave experiment, an analytical thermal stress model has been derived. Furthermore, the finite element method is used to calculate the transient temperature and stress profiles in comparison with both analytical results and those from commercial software.

Keywords

MOSFET; finite element analysis; semiconductor device breakdown; semiconductor device models; thermal stresses; DCI RF-pulses; LDMOS FET; direct current injection radiofrequency pulses; electrothermal stress interactions; finite element method; high power microwave experiment; laterally diffused metal oxide semiconductor field effect transistor; stress profiles; thermal stress model; threshold breakdown power; transient temperature; Field effect transistors; Finite element analysis; Heating; Metals; Stress; Thermal stresses; Transient analysis; Direct current injection (DCI) pulse; electrothermal stress (E-T-S); finite element method (FEM); laterally diffused metal oxide semiconductor (LDMOS) field effect transistor (FET); thermal and stress failure;

fLanguage

English

Journal_Title

Electromagnetic Compatibility, IEEE Transactions on

Publisher

ieee

ISSN

0018-9375

Type

jour

DOI

10.1109/TEMC.2014.2314304

Filename

6798715