The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications

Author

Scholten, Andries J. ; Smit, Geert D J ; De Vries, Bart A. ; Tiemeijer, Luuk F. ; Croon, Jeroen A. ; Klaassen, Dirk B M ; Van Langevelde, Ronald ; Li, Xin ; Wu, Weimin ; Gildenblat, Gennady

Author_Institution

NXP-TSMC Res. Center, Eindhoven

Volume

44

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

1415

Lastpage

1424

Abstract

The surface-potential-based compact MOS model PSP is reviewed with special emphasis to features of interest to analog and RF designers. Various aspects of the model are discussed, such as Gummel symmetry, capacitance reciprocity at V _DS = 0 V, parasitic resistances, junction modeling, distortion modeling, and noise modeling. Examples from circuit design are used to illustrate the benefits of the PSP model.

Keywords

MOSFET; capacitance; distortion; integrated circuit design; noise; surface potential; Gummel symmetry; MOSFET; capacitance reciprocity; compact model council; distortion modeling; junction modeling; noise modeling; parasitic resistances; Circuit noise; Circuit simulation; Circuit synthesis; Councils; Government; Information technology; MOSFET circuits; Parasitic capacitance; Radio frequency; Threshold voltage; Compact MOS models; PSP model; distortion; noise;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2009.2015821

Filename

4907311