• DocumentCode
    802187
  • Title

    Etching of sub-0.5 μm W/WSix bilayer gates

  • Author

    Shul, R.J. ; Sherwin, M.E. ; Baca, A.G. ; Rieger, D.J.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    32
  • Issue
    1
  • fYear
    1996
  • fDate
    1/4/1996 12:00:00 AM
  • Firstpage
    70
  • Lastpage
    71
  • Abstract
    Using electron-beam lithography, 0.3-2.0 μm W/WSix gates were fabricated in a reactive ion etch (RIE) system using a SF6/Ar plasma. W/WSix gate sidewall profiles and etch rates were evaluated against plasma chemistry, RF-power, and pressure
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electron beam lithography; gallium arsenide; semiconductor device metallisation; sputter etching; tungsten; tungsten compounds; 0.3 to 2.0 micron; Ar; MESFETs; RF power; SF6; SF6-Ar; W-WSi-GaAs; anisotropic etching; electron-beam lithography; etch rates; gate profile; plasma chemistry; pressure; reactive ion etch; sidewall profiles;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960048
  • Filename
    490737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=802187