20 W CW surface emitting 0.8 μm GaAs/GaAlAs laser diodes

Author

Vassilakis, E. ; Fillardet, T. ; Groussin, B. ; Cargemel, V. ; Carrière, C.

Author_Institution

Thomson Semocond. Specifique, Orsay, France

Volume

31

Issue

13

fYear

1995

fDate

6/22/1995 12:00:00 AM

Firstpage

1056

Lastpage

1057

Abstract

A continuous-wave optical power density of 200 W/cm² is reported for the first time for a 0.1 cm² element of a surface emitting GaAs/GaAlAs wafer. The laser facets are cleaved on-wafer by a microcleavage technique. The output optical beam is reflected by 45°-integrated beam deflectors situated at a distance of 15 μm from each laser facet. The lasers were soldered junction-up on a microchannel CuW cooler. The drive current at 20 W CW is 40 A with a slope efficiency of 0.7 W/A

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser cavity resonators; optical fabrication; reflectivity; semiconductor lasers; surface emitting lasers; 0.8 nm; 15 mum; 20 W; 40 A; CW surface emitting 0.8 μm GaAs/GaAlAs laser diodes; GaAs-GaAlAs; cleaved; continuous-wave optical power density; drive current; integrated beam deflectors; junction-up; laser facet; laser facets; microchannel CuW cooler; microcleavage technique; on-wafer; output optical beam reflection; slope efficiency; soldered; surface emitting GaAs/GaAlAs wafer;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950730

Filename

392670