Title :
Birefringence control in optical planar waveguides
Author :
Zhao, Xiuli ; Xu, Y.Z. ; Li, Chunfei
Author_Institution :
Accelink Technol. Co. Ltd., Wuhan, China
Abstract :
Planar optical waveguides consisting of layers from different materials created at elevated temperatures usually exhibit substantial stresses. These stresses are caused by thermal-induced strains that originate from the bonding of the layers in addition to intrinsic strains. For the first time, the analytical form of thermal stress formula is derived for the waveguide glass layer of the silicon-based silica waveguide in bilayer structures by the thin-film approximation and under the strain compatibility and the force equilibrium conditions. These conditions address the composite nature of the waveguide glass layer containing the waveguide core layer and the cladding layers within the optical planar waveguide. The developed formula reveals that temperature parameter, material parameters, and structural parameters affect the distribution of the thermal stress. By applying the formula, we demonstrate that it is possible to achieve the thermal stress-free, and, hence, the stress-induced birefringence-free waveguide devices by proper waveguide designs.
Keywords :
approximation theory; birefringence; optical design techniques; optical multilayers; optical planar waveguides; optical waveguide theory; thermal stresses; bilayer structures; birefringence control; bonding; cladding layers; elevated temperatures; force equilibrium conditions; intrinsic strains; optical planar waveguides; silicon-based silica waveguide; strain compatibility; stress-induced birefringence-free waveguide devices; stresses; thermal stress formula; thermal-induced strains; thin-film approximation; waveguide core layer; waveguide designs; waveguide glass layer; Birefringence; Capacitive sensors; Glass; Optical control; Optical materials; Optical planar waveguides; Optical waveguides; Planar waveguides; Thermal force; Thermal stresses;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2003.818168