A 50–59 GHz CMOS Injection Locking Power Amplifier

Author

Jiafu Lin ; Chirn Chye Boon ; Xiang Yi ; Guangyin Feng

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

25

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

52

Lastpage

54

Abstract

The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads.

Keywords

CMOS integrated circuits; injection locked amplifiers; millimetre wave amplifiers; power amplifiers; CMOS technology; ILPA; PAE; complementary metal-oxide-semiconductor; efficiency 16.1 percent; frequency 50 GHz to 59 GHz; injection locking range; injection-locked power amplifier; load-to-tank pulling; loading effect; millimeter-wave frequency; narrow injection locking bandwidth; power added efficiency; size 65 nm; Bandwidth; CMOS integrated circuits; Gain; Injection-locked oscillators; Logic gates; Power amplifiers; Power generation; CMOS power amplifier (PA); V-band; injection locking; low power; power added efficiency (PAE);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2369960

Filename

6978001