DocumentCode :
803069
Title :
Effect of cladding layer thickness on the performance of GaAs-AlGaAs graded index separate confinement heterostructure single quantum-well lasers
Author :
Behfar-Rad, A. ; Shealy, James R. ; Chinn, Stephen R. ; Wong, S. Simon
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Volume :
26
Issue :
9
fYear :
1990
fDate :
9/1/1990 12:00:00 AM
Firstpage :
1476
Lastpage :
1480
Abstract :
The thinning of cladding layers of GaAs-AlGaAs graded index separate confinement heterostructure single quantum-well (GRINSCH-SQW) lasers offers several advantages. These advantages include easier fabrication of surface grating-based lasers and ridge lasers, the reduction of growth time and source-material use, and the more effective removal of heat due to lower thermal resistance. Experimental results from GRINSCH-SQW lasers showing that typical cladding thicknesses of 1.5 to 2 μm are much thicker than necessary are presented. Lasers with cladding layers as thin as 4500 Å have not shown any increase in threshold current. Theoretical analysis shows good agreement with the experimental results on the minimum cladding thickness necessary to prevent an increase in the threshold current. The differential quantum efficiency is theoretically considered and is found to be more sensitive to cladding-layer thickness
Keywords :
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; gradient index optics; optical workshop techniques; semiconductor growth; semiconductor junction lasers; 1.5 to 2 micron; 4500 Å; GRINSCH-SQW lasers; GaAs-AlGaAs; cladding layer thickness; differential quantum efficiency; diode laser fabrication; graded index; growth time; heat removal; minimum cladding thickness; ridge lasers; separate confinement heterostructure; single quantum-well lasers; surface grating-based lasers; thermal resistance; threshold current; Gratings; Laser theory; Optical device fabrication; Potential well; Quantum well lasers; Resistance heating; Surface emitting lasers; Surface resistance; Thermal resistance; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.102624
Filename :
102624
Link To Document :
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