VUV stimulated anti-Stokes Raman emission in inverted atomic selenium

Author

Cooper, David G. ; Auyeung, Raymond C Y ; Feldman, Barry J.

Author_Institution

Jaycor, Vienna, VA, USA

Volume

26

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

1536

Lastpage

1545

Abstract

Stimulated anti-Stokes Raman scattering at 145.7 nm in inverted Se is generated by photolysis of OCSe at 193 nm and the subsequent up-conversion of 205.1-nm pump radiation. The tuning profile is characterized with OCSe pressure, the energies and relative timing of the pump and photodissociation lasers, and CO and Ar buffer-gas pressure. The use of CO as a buffer gas is discovered to be detrimental to the anti-Stokes output. Sixteen competing stimulated emission channels are found to suppress anti-Stokes emission on exact 4p ⁴ ¹S₀-4p³ 5s³ P⁰₁ pump resonance

Keywords

Raman lasers; optical frequency conversion; optical pumping; population inversion; selenium; stimulated Raman scattering; 193 nm; 205.1 nm; 4p⁴ ¹S₀-4p³ 5s³ P⁰₁ pump resonance; Co-Ar-Se; OCSe; Raman scattering; VUV stimulated anti-Stokes Raman emission; anti-Stokes output; buffer-gas pressure; inverted atomic Se; photodissociation lasers; pump lasers; pump radiation; stimulated emission channels; tuning profile; up-conversion; Argon; Atomic beams; Atomic measurements; Gas lasers; Laser excitation; Laser tuning; Pump lasers; Raman scattering; Stimulated emission; Timing;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.102633

Filename

102633