SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI

Author

Franco, Jacopo ; Kaczer, Ben ; Roussel, Philippe J. ; Mitard, Jérôme ; Cho, Moonju ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido

Volume

60

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

396

Lastpage

404

Abstract

We report extensive experimental results of the negative bias temperature instability (NBTI) reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The results clearly show that this high-mobility channel technology offers significantly improved NBTI robustness compared with Si-channel devices, which can solve the reliability issue for sub-1-nm equivalent-oxide-thickness devices. A physical model is proposed to explain the intrinsically superior NBTI robustness.

Keywords

Ge-Si alloys; MOSFET; negative bias temperature instability; semiconductor device models; semiconductor device reliability; NBTI; SiGe; SiGe channel pMOSFET; SiGe channel technology; equivalent-oxide-thickness devices; high-mobility channel technology; main gate-stack parameters; negative bias temperature instability; reliability; ultrathin EOT devices; Logic gates; Robustness; Silicon; Silicon germanium; Stress; Stress measurement; Ge; SiGe; negative bias temperature instability (NBTI); pMOSFET; reliability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2225625

Filename

6365256