Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (N _it) and bulk oxide charge Q_ox creation in the channel and in the drift regions separately. The growth rates of N_it and Q_ox are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum I_g stress causes the largest drain current and subthreshold slope degradation because of both N_it generation in the channel and Q_ox creation in the bird´s beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation