Title :
A new lossy substrate de-embedding method for sub-100 nm RF CMOS noise extraction and modeling
Author :
Guo, Jyh-Chyurn ; Lin, Yi-Min
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A new equivalent circuit method is proposed in this paper to de-embed the lossy substrate and lossy pads´ parasitics from the measured RF noise of multifinger MOSFETs with aggressive gate length scaling down to 80 nm. A new RLC network model is subsequently developed to simulate the lossy substrate and lossy pad effect. Good agreement has been realized between the measurement and simulation in terms of S-parameters and four noise parameters, NFmin (minimum noise figure), Rn (noise resistance), Re(Ysopt), and Im(Ysopt) for the sub-100-nm RF nMOS devices. The intrinsic NFmin extracted by the new de-embedding method reveal that NFmin at 10 GHz can be suppressed to below 0.8 dB for the 80-nm nMOS attributed to the advancement of fT to 100-GHz level and the effectively reduced gate resistance by multifinger structure.
Keywords :
CMOS integrated circuits; MOSFET; equivalent circuits; integrated circuit modelling; integrated circuit noise; radiofrequency integrated circuits; 10 GHz; 100 GHz; 80 nm; RF CMOS; RF nMOS devices; RF noise; RLC network model; equivalent circuit method; lossy pad effect; lossy substrate de-embedding method; multifinger MOSFET; noise extraction; Circuit noise; Equivalent circuits; Length measurement; Loss measurement; MOS devices; MOSFETs; Noise figure; Noise measurement; Radio frequency; Semiconductor device modeling; De-embedding; RF CMOS; noise; pad; substrate;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.862699