Title :
A Single Supply, High Linearity 2-W PA MMIC for WLAN Applications Using Quasi-Enhancement Mode PHEMTs
Author :
Lin, Che-Hung ; Liu, Hong-Zhi ; Chu, Chen-Kuo ; Huang, Hou-Kuei ; Liu, Chi-Chuan ; Chang, Ching-Hsueh ; Wu, Chang-Luen ; Chang, Chian-Sern ; Wang, Yeong-Her
Author_Institution :
Dept. of Electr. Eng., Adv. Nat. Cheng-Kung Univ., Tainan
Abstract :
A fully matched, 2-W high linearity amplifier monolithic microwave integrated circuit, by using quasi-enhancement mode technology of AlGaAs/InGaAs/ GaAs pseudomorphic high electron mobility transistors, is demonstrated for wireless local area network applications. At Vgs= 0 V, Vds= 5 V, this power amplifier has achieved 14-dB small-signal gain, 33-dBm output power at 1-dB gain compression point, and 34.5-dBm saturated output power with 35% power added efficiency at 5.8 GHz. Moreover, high-linearity with 45.2-dBm third-order intercept point is also achieved
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; wireless LAN; 0 V; 1 dB; 14 dB; 2 W; 5 V; 5.8 GHz; AlGaAs-InGaAs-GaAs; PA MMIC; PHEMT; WLAN applications; power amplifier; pseudomorphic high electron mobility transistors; quasi enhancement mode; single supply high linearity amplifier; third order intercept point; Application specific integrated circuits; Linearity; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Power amplifiers; Power generation; Wireless LAN; Linearity; monolithic microwave integrated circuit (MMIC); power amplifier; quasi-enhancement mode pseudomorphic high electron mobility transistors (PHEMT); single supply;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.884912
