The plasma extraction transit-time oscillation in bipolar power Devices-Mechanism,EMC effects, and prevention

Author

Siemieniec, Ralf ; Mourick, Paul ; Netzel, Mario ; Lutz, Josef

Author_Institution

Infineon Technol. Austria AG, Villach, Austria

Volume

53

Issue

2

fYear

2006

Firstpage

369

Lastpage

379

Abstract

Under certain conditions, radio frequency (RF) oscillations may occur during the turn off of bipolar power devices. These oscillations are related to the plasma extraction transit time (PETT) effect. The mechanism of the oscillation and the complex dependencies for the occurrence of the effect are discussed in this paper. Three-dimensional electromagnetic compatibility (EMC) simulation is used to investigate modifications of the power module layout that shift its resonance point and therefore, effectively suppress the unwanted RF oscillations. EMC measurements and examples of failures of power electronic equipment related to the occurrence of PETT oscillations demonstrate the necessity for suppressing this effect.

Keywords

electromagnetic compatibility; oscillations; power bipolar transistors; power semiconductor devices; bipolar power devices; bipolar power semiconductor device; electromagnetic compatibility; plasma extraction transit time effect; power electronic equipment; power module layout; radio frequency oscillations; Electromagnetic compatibility; Electromagnetic measurements; Insulated gate bipolar transistors; Multichip modules; Plasma devices; Plasma measurements; Power electronics; Power measurement; Radio frequency; Switches; Bipolar power semiconductor device; electromagnetic compatibility; power module layout; transit-time oscillation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.862705

Filename

1580876