• DocumentCode
    804372
  • Title

    PCD Lifetime Measurements as a Function of Temperature in Detector Grade and Impurity Doped Germaniui

  • Author

    Schoenmaekers, W.K. ; Van Ouytsel, J.I. ; De Laet, L.H.

  • Author_Institution
    Metallurgie Hoboken-Overpelt, Olen-Belgium
  • Volume
    19
  • Issue
    1
  • fYear
    1972
  • Firstpage
    279
  • Lastpage
    288
  • Abstract
    It is shown, theoretically and experimentally, that PCD lifetime measurements, as a function of temperature in p-Ge, may be used to determine the concentration, the trap energy and capture cross sections for electrons, of single and multilevel impurities.
  • Keywords
    Crystals; Detectors; Electron traps; Energy capture; Impurities; Lifetime estimation; Nonlinear equations; Solids; Spontaneous emission; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1972.4326522
  • Filename
    4326522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=804372