Silver as a Lifetime Killer in p-Ge, and a Hole Trap in Ge(Li) Detectors

The temperature dependence of the lifetime in silver doped p-Ge, as measured by the PCD method, is shown to be in agreement with a model for recombination through multivalent flaws. New values of capture cross section are determined (¿n = 1.5×10-14 cm2, ¿n = 0.75×10-16 cm2). Lifetimes of electrons and holes are also measured on a silver doped Ge(Li) detector, by means of two techniques, using a collimated beam of ¿-rays (137Cs). Silver causes preferential hole tarpping and therefore cannot be responsible for the preferential electron trapping usually observed.