Electrooptic tuning of a fiber ring semiconductor laser

Author

Porte, Henri ; Frison, Thierry ; Mollier, Pascal ; Goedgebuer, Jean Pierre

Author_Institution

URA CNRS, UFR Sci. et Tech., Besancon, France

Volume

7

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

700

Lastpage

702

Abstract

This letter reports recent results obtained in the area of wavelength tuning of semiconductor lasers. The laser is constructed from an InGaAsP 1300-nm semiconductor optical travelling-wave amplifier. The cavity consists of a fiber ring resonator using a low fiber coupler as the output mirror. The intra-cavity electrooptic tuner works as a one-stage Lyot filter and allows wavelength tuning over a spectral range of 20 nm with a tuning rate of 0.05 nm V/sup -1/. This is one of the best results reported using electrooptic birefringent tuning systems.<>

Keywords

III-V semiconductors; electro-optical devices; fibre lasers; gallium arsenide; indium compounds; laser tuning; ring lasers; semiconductor lasers; travelling wave amplifiers; 1300 nm; InGaAsP; electrooptic birefringent tuning; fiber coupler; fiber ring semiconductor laser; intra-cavity electrooptic tuner; one-stage Lyot filter; semiconductor optical travelling-wave amplifier; wavelength tuning; Fiber lasers; Laser tuning; Lasers and electrooptics; Optical fiber couplers; Optical ring resonators; Optical tuning; Ring lasers; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.393178

Filename

393178