• DocumentCode
    804976
  • Title

    High-responsivity optical FET´s fabricated on a FET-SEED structure

  • Author

    Jiafu Luo ; Grot, A. ; Psaltis, D.

  • Author_Institution
    Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    7
  • Issue
    7
  • fYear
    1995
  • fDate
    7/1/1995 12:00:00 AM
  • Firstpage
    760
  • Lastpage
    762
  • Abstract
    Optical detectors with responsivity of 1000 A/W and response time of 10 μs at 50 nW optical input power were fabricated using the AT&T FET-SEED process.
  • Keywords
    SEEDs; field effect integrated circuits; integrated optoelectronics; optical fabrication; photodetectors; phototransistors; 10 mus; 50 nW; FET-SEED; GaAs-AlGaAs; fabrication; optical FETs; optical detectors; response time; responsivity; Dark current; FETs; Gallium arsenide; Neurons; Optical arrays; Optical detectors; Optical device fabrication; Quantum well devices; Sensor arrays; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.393197
  • Filename
    393197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=804976