DocumentCode
80553
Title
Analysis of Gated CMOS Image Sensor for Spatial Filtering
Author
Spivak, Arthur ; Belenky, Alexander ; Fish, Alexander ; Yadid-Pecht, Orly
Author_Institution
VLSI Syst. Center, Ben-Gurion Univ. of the Negev, Beersheba, Israel
Volume
60
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
305
Lastpage
313
Abstract
Pulsed gated vision systems are essential tools in obtaining images in obscure environmental conditions. Contrary to the existing gated systems, which use intensifiers and other external equipment, we present a design of gated sensor, which is implemented in a CMOS process. The proposed sensor is capable to filter out the objects according to their distance to the camera. This ability enables to remove the undesired reflections and to see more clearly the target. Such gated vision principle is implemented using a unique multishuttering regime. Various properties of this regime such as charge-transfer mechanisms, frequency of switching, pulsewidth, slew rate, etc., are described and thoroughly analyzed. Upon the performed analysis, we optimize the shape of the shutter pulses and substantially reduce the charge-transfer time. A 128 × 256 CMOS gated image sensor was fabricated in 0.18-μm process and successfully tested. The included experimental results fully corroborate with the theory, showing the sensor functionality and proving the feasibility of the proposed design.
Keywords
CMOS image sensors; cameras; image intensifiers; integrated optoelectronics; spatial filters; camera; charge-transfer mechanism; external equipment; gated CMOS image sensor; intensifier; multishuttering regime; pulsed gated vision system; size 0.18 mum; spatial filtering; CMOS integrated circuits; Capacitance; Charge transfer; Logic gates; Shape; Switches; Transistors; Active-pixel sensor; CMOS image sensors; charge transfer; gating; global shutter; sensor;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2012.2226726
Filename
6365291
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