• DocumentCode
    80580
  • Title

    Hole Mobility Enhancement in Compressively Strained {\\rm Ge}_{0.93}{\\rm Sn}_{0.07} pMOSFETs

  • Author

    Gupta, Swastik ; Huang, Yi-Pai ; Kim, Youngjae ; Sanchez, E. ; Saraswat, Krishna C.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • Volume
    34
  • Issue
    7
  • fYear
    2013
  • fDate
    Jul-13
  • Firstpage
    831
  • Lastpage
    833
  • Abstract
    Germanium tin (GeSn) pMOSFETs with channel Sn composition of 7% are fabricated using a low thermal budget process. GeSn pMOSFETs show enhancement in hole mobility over control Ge devices by 85% in high inversion charge density regime. Hole mobility improvement observed in GeSn channel pMOSFETs compared with Ge control is due to the biaxial compressive strain in GeSn resulting from epitaxial growth of GeSn thin films on relaxed Ge buffer layers.
  • Keywords
    CVD coatings; MOSFET; epitaxial growth; germanium compounds; hole mobility; Ge0.93Sn0.07; compressively strained pMOSFET; epitaxial growth; high inversion charge density; hole mobility enhancement; low thermal budget process; Germanium tin (GeSn); hole mobility; pMOSFET;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2259573
  • Filename
    6521409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=80580