Electroluminescence From Two Junction Punch Through Structures in Silicon Nanowires

Author

Du Plessis, Monuko ; Joubert, Trudi-Heleen

Author_Institution

Dept. of ElectricalElectronic & Comput. Eng., Univ. of Pretoria, Pretoria, South Africa

Volume

27

Issue

16

fYear

2015

fDate

Aug.15, 15 2015

Firstpage

1741

Lastpage

1744

Abstract

Hot carrier electroluminescence in two junction devices under punch through conditions manufactured in silicon on insulator nanowires are investigated. Of interest is the spectral content of the light emission, as well as the external power efficiency and the light extraction efficiency. An order of magnitude improvement in external power efficiency was achieved relative to a bulk silicon p-n junction in avalanche.

Keywords

electroluminescence; elemental semiconductors; integrated optics; nanophotonics; nanowires; optical fabrication; p-n junctions; silicon; silicon-on-insulator; Si; avalanche; bulk silicon p-n junction; external power efficiency; hot carrier electroluminescence; light emission; light extraction efficiency; silicon-on-insulator nanowires; spectral content; two junction devices; two junction punch; CMOS integrated circuits; Electric fields; Junctions; Nanowires; Optical films; Photonics; Silicon; SOI; hot carriers; nanowire; silicon electroluminescence;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2438956

Filename

7114233