A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions

Author

Vatankhahghadim, Aynaz ; Huda, S. ; Sheikholeslami, Ali

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada

Volume

61

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

2634

Lastpage

2643

Abstract

Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfer-torque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for their capabilities and limitations. Furthermore, a Verilog-A model is developed to predict dynamic characteristics of the MTJ. These models are used in simulating a prototype circuit to illustrate their strengths and weaknesses.

Keywords

MRAM devices; flip-flops; logic circuits; magnetic tunnelling; magnetoelectronics; STT-MRAM; Verilog-A model; circuit modeling; dynamic models; spin flip flops; spin logic circuits; spin-transfer-torque magnetic tunnel junctions; spin-transfer-torque magnetoresistive random access memory; static models; Equations; Integrated circuit modeling; Magnetic tunneling; Magnetization; Mathematical model; Switches; Vectors; Magnetic tunnel junction (MTJ); magnetoresistive random-access memory (MRAM); modeling; spin-transfer-torque (STT);

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2014.2332247

Filename

6848862