Title :
3.125-Gb/s modulation up to 70/spl deg/C using 1.3-/spl mu/m VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications
Author :
Boucart, J. ; Suruceanu, G. ; Royo, P. ; Iakovlev, V.I. ; Syrbu, A. ; Caliman, A. ; Mereuta, A. ; Mircea, A. ; Berseth, C.-A. ; Rudra, A. ; Kapon, E.
Author_Institution :
Lab. d´´Electronique Gen., Ecole Polytechnique Fed. de Lausanne
Abstract :
The development of the 10GBASE-LX4 communication standard for aggregated 10-Gb/s rates feeds the need for low-cost laser sources in the 1275-1350-nm wavelength range operating at modulation rates of 3.125 Gb/s. We present comprehensive characterization of wafer fused vertical-cavity surface-emitting lasers with characteristics that meet the IEEE802.3ae specification for 10GBASE-LX4. These include output power greater than 1.5 mW up to 80degC, wavelength around 1340 nm, single-mode emission and modulation at 3.125 Gb/s, and wide open eyes with rise and fall times below 100 ps up to 70degC
Keywords :
IEEE standards; optical communication equipment; optical fabrication; optical fibre communication; optical modulation; semiconductor lasers; surface emitting lasers; telecommunication standards; 1.3 mum; 10GBASE-LX4 communication standard; 3.125 Gbit/s; IEEE802.3ae specification; VCSEL; modulation; single-mode emission; vertical-cavity surface-emitting lasers; wafer fusion; Optical surface waves; Power generation; Power lasers; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Surface waves; Thermal conductivity; Vertical cavity surface emitting lasers; Optical modulation; quantum-well lasers; semiconductor laser; surface-emitting lasers; tunnel diodes;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.863980
