On the choice of optimum FET size in wide-band transimpedance amplifiers

Author

Abidi, A.A.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

6

Issue

1

fYear

1988

fDate

1/1/1988 12:00:00 AM

Firstpage

64

Lastpage

66

Abstract

The main figure of merit for transimpedance amplifiers used in amplifying photocurrents in fiber-optics systems is the optical sensitivity. This sensitivity is determined by the equivalent input noise current of the amplifier. To obtain the best noise performance, most transimpedance amplifiers with FET input stages are designed using a result that prescribes making the capacitance of the input FET equal to the photodiode capacitance. It is shown that this is not necessarily the most favorable practice when using FETs in scaled submicrometer technologies. For example, it may compromise the stability of the amplifier

Keywords

amplifiers; electron device noise; field effect transistors; optical fibres; capacitance; equivalent input noise current; fiber-optics systems; figure of merit; optical sensitivity; optimum FET size; photocurrents; photodiode capacitance; scaled submicrometer technologies; stability; wide-band transimpedance amplifiers; Broadband amplifiers; Capacitance; FETs; Optical amplifiers; Optical fiber amplifiers; Optical fiber sensors; Optical noise; Photoconductivity; Semiconductor optical amplifiers; Wideband;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.3965

Filename

3965