NBTI/PBTI-Aware WWL Voltage Control for Half-Selected Cell Stability Improvement

Author

Chuan Zhao Lee ; Kam Chew Leong ; Zhi Hui Kong ; Kim, Tony Tae-Hyoung

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

60

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

602

Lastpage

606

Abstract

This brief presents a negative bias temperature instability (BTI)/positive BTI-aware write-wordline (WWL) voltage control technique for improving degraded cell stability of half-selected cells without extra power consumption. After BTI aging, the proposed lowering WWL voltage recovers the degraded cell stability without scarifying the write margin. Finally, we also present a sample circuit implementation of the proposed WWL voltage control scheme.

Keywords

negative bias temperature instability; signal processing equipment; voltage control; BTI aging; NBTI-PBTI-aware WWL voltage control; cell stability degradation; half-selected cell stability improvement; negative bias temperature instability; positive BTI-aware write-wordline voltage control technique; power consumption; sample circuit; write margin; Circuit stability; Degradation; SRAM cells; Stability analysis; Stress; Voltage control; Half-selected static noise margin (HS-SNM); negative bias temperature instability (NBTI); positive bias temperature instability (PBTI);

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2013.2273731

Filename

6578139