• DocumentCode
    807593
  • Title

    Low Energy Ion Bombardment Effects in SiO2

  • Author

    McCaughan, Daniel V. ; Murphy, V.T.

  • Author_Institution
    Bell Telephone Laboratories, Incorporated Murray Hill, New Jersey 07974
  • Volume
    19
  • Issue
    6
  • fYear
    1972
  • Firstpage
    249
  • Lastpage
    255
  • Abstract
    Evidence has been presented for the presence of mobile ions in ion bombarded SiO2, these ions being possibly protons or sodium ions. A model invoking neutralization of the incident ion beam at the surface, followed by impurity ion transport to the interface under the influence of the field building up across the SiO2 film during bombardment has been constructed to explain the experimental data.
  • Keywords
    Annealing; Capacitance-voltage characteristics; Degradation; Frequency measurement; Insulation; Interface states; Metallization; Nitrogen; Plasma temperature; Semiconductor films;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1972.4326841
  • Filename
    4326841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=807593