• DocumentCode
    807622
  • Title

    Low-energy erbium implanted Si3N4/SiO2/Si waveguides

  • Author

    Lumholt, O. ; Bernas, H. ; Chabli, A. ; Cahumont, J. ; Grand, G. ; Valette, S.

  • Author_Institution
    Tech. Univ. of Denmark, Lyngby, Denmark
  • Volume
    28
  • Issue
    24
  • fYear
    1992
  • Firstpage
    2242
  • Lastpage
    2243
  • Abstract
    Photoluminescence spectroscopy studies of low energy erbium and erbium/oxygen implanted silicon-nitride waveguides are compared. Emission spectra show peaks at 1533 and 1548 nm. The optimum annealing temperature is determined to be 1175 degrees C yielding lifetimes up to 7 ms and a several decade intensity increase. Er implantation yields more than 40% longer lifetime and higher intensity than Er/O.
  • Keywords
    elemental semiconductors; erbium; infrared spectra of inorganic solids; ion implantation; optical waveguides; photoluminescence; silicon; silicon compounds; 1117 degC; 1533 nm; 1548 nm; Si 3N 4:Er, O-SiO 2-Si; Si 3N 4:Er-SiO 2-Si; emission spectra; ion implanted optical waveguides; low-energy Er implantation; optimum annealing temperature; photoluminescence spectra;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921441
  • Filename
    173070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=807622