• DocumentCode
    80795
  • Title

    3-D Solar Cells Based on Radial Silicon Heterojunctions Exploiting Microhole Lattices

  • Author

    Weiying Ou ; Lei Zhao ; Surdo, S. ; Hongwei Diao ; Hailing Li ; Chunlan Zhou ; Wenjing Wang ; Barillaro, G.

  • Author_Institution
    Key Lab. of Solar Thermal Energy & Photovoltaic Syst., Inst. of Electr. Eng., Beijing, China
  • Volume
    25
  • Issue
    19
  • fYear
    2013
  • fDate
    Oct.1, 2013
  • Firstpage
    1908
  • Lastpage
    1911
  • Abstract
    In this letter, 3-D solar cells based on radial amorphous/crystalline silicon heterojunctions (SHJs), which are formed on 2-D lattices of vertical high aspect-ratio microholes (MHs) etched in crystalline silicon (c-Si) substrates, are realized with conversion efficiency of ~ 3%. Silicon high aspect-ratio MH lattices, with hole diameter of a few micrometers and hole depth of tens micrometers, are produced on n-type c-Si substrates by electrochemical micromachining (ECM) technology with low reflectance ( depending on diameter and depth) in the wavelength range between 400 and 900 nm, which is commonly exploited for solar cell application. The radial SHJ solar cells are obtained by successive quasi-conformal deposition of hydrogenated amorphous silicon (a-Si:H) i-layer and p-layer, respectively, via plasma-enhanced chemical vapor deposition at 200°C, within the MH lattices, and subsequent indium tin oxide and Ag deposition for the formation of electrical front and back contacts, respectively. Experimental conversion efficiencies up to 2.72% are obtained under standard AM1.5 illumination with intensity of 100 mW/cm2, thus envisaging that ECM technology can be successfully adopted to realize efficient 3-D solar cells based on radial p-n junctions exploiting high aspect-ratio MH lattices, in particular, or other microstructures, in general.
  • Keywords
    amorphous semiconductors; electrochemical machining; elemental semiconductors; etching; indium compounds; micromachining; p-n junctions; plasma CVD; semiconductor heterojunctions; silicon; silver; solar cells; 2D lattices; 3D solar cells; Ag; ECM; conversion efficiency; crystalline silicon; electrochemical micromachining; etching; hydrogenated amorphous silicon layer; plasma-enhanced chemical vapor deposition; radial p-n junctions; successive quasiconformal deposition; temperature 200 degC; vertical high aspect ratio microholes; wavelength 400 nm to 9000 nm; Etching; Lattices; P-n junctions; Photovoltaic cells; Reflectivity; Silicon; Solar cells; amorphous/crystalline silicon heterojunctions; electrochemical micromachining; radial p-n junctions; silicon microhole lattices;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2013.2277797
  • Filename
    6578142