10-GHz Si bipolar amplifier and mixer ICs for coherent optical systems

Author

Okamura, Toshiyuki ; Kurioka, Chiharu ; Kuraishi, Yoshiaki ; Tsuzuki, Orie ; Senba, Takashi ; Ushirozawa, Mizuyuki ; Fujimaru, Mikio

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

27

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1775

Lastpage

1780

Abstract

Using a 30-GHz f_T silicon bipolar process, 10-GHz amplifier and mixer ICs for a multigigabit-per-second coherent optical-fiber communication system were fabricated. The dual-feedback amplifier with triple Darlington achieves a 10-GHz bandwidth and 20-dB gain. The Gilbert-cell mixer operates up to 10 GHz with a 10-dB conversion loss. The simulation technique, used for the design of these ICs includes an improved interconnect line model for the high-frequency region. The 10-GHz amplifier has a 1-mm² chip size and 210-mW power dissipation. The mixer has 2-mm² chip size and 550-mW power dissipation

Keywords

bipolar integrated circuits; elemental semiconductors; linear integrated circuits; microwave amplifiers; mixers (circuits); optical communication equipment; silicon; wideband amplifiers; 10 GHz; 10 dB; 20 dB; 210 mW; 30 GHz; 550 mW; Gilbert-cell mixer; Si; amplifier; bipolar process; coherent optical systems; conversion loss; dual-feedback amplifier; high-frequency region; interconnect line model; mixer ICs; multigigabit-per-second; optical-fiber communication; simulation technique; triple Darlington; Bandwidth; Optical amplifiers; Optical interconnections; Optical losses; Power dissipation; Power system interconnection; Power system modeling; Semiconductor optical amplifiers; Silicon; Stimulated emission;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.173104

Filename

173104