Tunable BiCMOS continuous-time filter for high-frequency applications

Author

Alini, Roberto ; Baschirotto, Andrea ; Castello, Rinaldo

Author_Institution

Dept. of Electron., Pavia Univ., Italy

Volume

27

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1905

Lastpage

1915

Abstract

A BiCMOS fully differential transconductor based on MOS transistors operating in the linear region is presented. The circuit has an equivalent nondominant pole located above 1.5 GHz. This makes it suitable for high-frequency continuous-time filters. A second-order low-pass filter using the new transconductor realized in a 2-μm BiCMOS technology is reported. The cutoff frequency f₀ of the cell is tunable in the range of 8-32 MHz and the quality factor is 2. The filter THD stays lower than -40 dB for an output signal up to 3.2 V_p-p at 5-MHz frequency. The area of the cell is 0.322 mm² and the power consumption (with f₀=25 MHz) is 30 mW with a single 5-V power supply

Keywords

BiCMOS integrated circuits; Q-factor; active filters; linear integrated circuits; low-pass filters; tuning; 2 micron; 30 mW; 8 to 32 MHz; BiCMOS continuous-time filter; BiCMOS fully differential transconductor; MOS transistors; THD; cutoff frequency; equivalent nondominant pole; high-frequency applications; linear region; power consumption; quality factor; second-order low-pass filter; total harmonic distortion; tunable filter; BiCMOS integrated circuits; Clocks; Cutoff frequency; Energy consumption; Low pass filters; MOSFET circuits; Q factor; Signal processing; Transconductors; Tunable circuits and devices;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.173121

Filename

173121