• DocumentCode
    808640
  • Title

    Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers

  • Author

    Fathpour, S. ; Bhattacharya, P. ; Pradhan, S. ; Ghosh, S.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • Volume
    39
  • Issue
    20
  • fYear
    2003
  • Firstpage
    1443
  • Lastpage
    1445
  • Abstract
    Measurements of ultra-low linewidth enhancement factor in ridge-waveguide tunnel injection In0.4Ga0.6As/GaAs self-assembled quantum dot lasers have been made and the results compared with similar quantum well lasers. Values of α∼3.8 were measured in the quantum well lasers, and α was ≤0.7 in the quantum dot lasers. The consequent suppression of filamentation in the quantum dot devices has also been observed.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; ridge waveguides; self-assembly; spectral line breadth; waveguide lasers; In0.4Ga0.6As-GaAs; filamentation suppression; linewidth enhancement factor; near-field pattern; ridge waveguide; self-assembled quantum dot lasers; semiconductor lasers; tunnel injection; ultra-low linewidth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030944
  • Filename
    1238592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808640