Design and characteristics of InGaAs/InP composite-channel HFET´s

Author

Enoki, Takatomo ; Arai, Kunihiro ; Kohzen, Atsuo ; Ishii, Yasunobu

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

42

Issue

8

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

1413

Lastpage

1418

Abstract

A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is presented for the first time. This novel channel structure takes advantage of both the high drift velocity and low impact ionization of InP at high electric fields as well as the high electron mobility of InGaAs at low electric fields. It is shown that the doping density of the InP subchannel is the key parameter to realize the advantages of the composite channel. A very high transconductance of 1.29 S/mm and a current gain cutoff frequency of 68.7 GHz are achieved with 0.6 and 0.7 μm gates, respectively. The average velocity of electrons in the composite channel is 2.9×10⁷ cm/s. The devices have no kink phenomena in their I-V characteristics possibly due to low impact ionization in the InP subchannel.

Keywords

III-V semiconductors; carrier mobility; doping profiles; gallium arsenide; impact ionisation; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; 0.6 micron; 0.7 micron; 1.29 S/mm; 68.7 GHz; InGaAs channel; InGaAs-InP; InP subchannel; composite-channel HFET; doping density; heterostructure field-effect transistors; high drift velocity; high electron mobility; low impact ionization; Cutoff frequency; Doping; Electron mobility; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Laboratories; MODFETs;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.398656

Filename

398656