Title :
Elimination of parasitic bipolar-induced breakdown effects in ultra-thin SOI MOSFETs using narrow-bandgap-source (NBS) structure
Author :
Sim, Jai-Hoon ; Choi, Chang-Hoon ; Kim, Kinam
Author_Institution :
Div. of Memory, Samsung Electron. Corp., Kyungki, South Korea
fDate :
8/1/1995 12:00:00 AM
Abstract :
In this paper, we introduce the Si-SiGe narrow bandgap-source (NBS) SOI device structure in order to improve the low drain-to-source breakdown voltage (VBD) in ultra-thin SOI devices. Reducing the potential barrier of valence band between source and body by applying the SiGe layer at the source region, we can improve the drain-to-source breakdown voltage by suppressing the hole accumulation in the body. As confirmed by 2D simulation results, NBS-SOI devices provide excellent performance compared to conventional SOI devices.
Keywords :
Ge-Si alloys; MOSFET; electric breakdown; energy gap; silicon-on-insulator; Si-SiGe; drain-to-source breakdown voltage; hole accumulation suppression; narrow-bandgap-source structure; parasitic bipolar-induced breakdown effects; potential barrier; ultra-thin SOI MOSFET; valence band; CMOS technology; Charge carrier processes; Electric breakdown; Germanium silicon alloys; MOS devices; MOSFETs; NIST; Niobium; Silicon germanium; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
