• DocumentCode
    808803
  • Title

    Backside illuminated high saturation current partially depleted absorber photodetectors

  • Author

    Li, X. ; Demiguel, S. ; Li, N. ; Campbell, J.C. ; Tulchinsky, D.L. ; Williams, K.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
  • Volume
    39
  • Issue
    20
  • fYear
    2003
  • Firstpage
    1466
  • Lastpage
    1467
  • Abstract
    A high-saturation-current, backside-illuminated In0.53Ga0.47As photodiode with a partially depleted absorber has been fabricated and tested. The 1 dB small-signal compression current was 199 mA at 1 GHz for a 100 μm diameter photodiode. The 1 dB large-signal compression current was 24 mA at 48 GHz for an 8 μm-diameter photodiode. The responsivity was 0.6 A/ W at 1.55 μm.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; photodetectors; photodiodes; 1 GHz; 1.55 micron; 100 micron; 199 mA; 24 mA; 48 GHz; 8 micron; In0.53Ga0.47As; backside-illuminated photodiode; partially depleted absorber photodetectors; responsivity; saturation current; small-signal compression current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030927
  • Filename
    1238606
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808803