Title :
Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
Author :
Gillespie, J.K. ; Fitch, R.C. ; Sewell, J. ; Dettmer, R. ; Via, G.D. ; Crespo, A. ; Jenkins, T.J. ; Luo, B. ; Mehandru, R. ; Kim, J. ; Ren, F. ; Gila, B.P. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J.
Author_Institution :
Air Force Res. Lab., Wright-Patterson AFB, OH, USA
Abstract :
The low temperature (100/spl deg/C) deposition of Sc2O3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5×100 μm2 HEMTs for both types of oxide passivation layers. Both Sc2O3 and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiN/sub x/ passivation which typically showed /spl les/2 dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc2O3 or MgO passivation. These films appear promising for reducing the effects of surface states on the DC and RF performance of AlGaN/GaN HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; magnesium compounds; microwave field effect transistors; microwave power transistors; passivation; power HEMT; scandium compounds; surface states; wide band gap semiconductors; 0.5 micron; 100 degC; 100 micron; 4 GHz; AlGaN-GaN; AlGaN/GaN HEMTs; DC performance; HEMT gain; HEMT output power; MODFETs; MgO; MgO passivation layers; RF performance; Sc/sub 2/O/sub 3/; Sc/sub 2/O/sub 3/ passivation layers; low temperature deposition; oxide passivation layers; surface states; Aluminum gallium nitride; Chemicals; Gallium nitride; HEMTs; MODFETs; Passivation; Plasma chemistry; Plasma devices; Plasma temperature; Power generation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.802592
