Title :
A high performance MIM capacitor using HfO2 dielectrics
Author :
Hu, Hang ; Zhu, Chunxiang ; Lu, Y.F. ; Li, M.-F. ; Cho, Byung Jin ; Choi, W.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Metal-insulator-metal (MIM) capacitors with a 56 nm thick HfO/sub 2/ high-/spl kappa/ dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (/spl sim/200/spl deg/C). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO/sub 2/ MIM capacitor can provide a higher capacitance density than Si/sub 3/N/sub 4/ MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2/spl times/10/sup -9/ A/cm/sup 2/ at 3 V is achieved. All of these make the HfO/sub 2/ MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications.
Keywords :
MIM devices; UHF integrated circuits; capacitance; hafnium compounds; leakage currents; mixed analogue-digital integrated circuits; permittivity; thin film capacitors; 200 C; 3 V; 56 nm; Al-HfO/sub 2/-Ta; HfO/sub 2/ high-/spl kappa/ dielectric film; MIM capacitor; Si RF IC applications; Si mixed signal IC applications; capacitance density; electrical properties; low leakage current; metal-insulator-metal capacitors; temperature coefficient; voltage linearity; Capacitance; Dielectric films; Hafnium oxide; Leakage current; Linearity; MIM capacitors; Metal-insulator structures; Silicon; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.802602
