A low-frequency GaAs MESFET circuit model

Author

Scheinberg, Norman ; Bayruns, Robert ; Goyal, Ravender

Author_Institution

Anadigics Inc., Warren, NJ, USA

Volume

23

Issue

2

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

605

Lastpage

608

Abstract

GaAs MESFETs exhibit low-frequency anomalies which effect the performance of broadband systems. A four-terminal large-signal GaAs MESFET circuit model which predicts may of the low-frequency anomalies discovered in GaAS MESFETs is proposed. The four-terminal model accurately models `drain lag´, frequency dependence of the output resistance, and hysteresis. This model when implemented in a circuit analysis program will enable circuit designs to predict which circuit topologies will be more or less sensitive to the GaAs low-frequency anomalies

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hysteresis; semiconductor device models; GaAs; GaAs MESFET circuit model; broadband systems; drain lag; four-terminal model; frequency dependence; hysteresis; large signal model; low frequency model; low-frequency anomalies; semiconductors; Circuit analysis; Circuit synthesis; Circuit topology; Frequency dependence; Gallium arsenide; Hysteresis; MESFET circuits; Noise reduction; Predictive models; Random access memory; Resistors; Signal to noise ratio; Solid modeling; Virtual manufacturing; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.1029

Filename

1029