DocumentCode
80946
Title
Vertically Coupled Microdisk Resonators Using AlGaAs/AlOx Technology
Author
Calvez, Stephane ; Lafleur, Gael ; Larrue, Alexandre ; Calmon, Pierre-Francois ; Arnoult, Alexandre ; Almuneau, Guilhem ; Gauthier-Lafaye, Olivier
Author_Institution
Lab. d´Anal. et d´Archit. des Syst., Centre Nat. de la Rech. Sci., Toulouse, France
Volume
27
Issue
9
fYear
2015
fDate
May1, 1 2015
Firstpage
982
Lastpage
985
Abstract
In this letter, we report the first experimental demonstration of microdisk resonators that are vertically coupled to their buried access waveguides on III-V semiconductor epitaxial structures using an original fabrication process. The here-proposed and validated three-dimensional integration scheme exploits selective lateral thermal oxidation of aluminium-rich AlGaAs layers. Compared with the previously reported processing techniques, this new scheme is simpler as it does not require any planarization or substrate transfer steps. As a proof-of-principle demonstration of this approach, 250-μm diameter microdisk devices exhibiting quality factor reaching ~8500 have been successfully fabricated.
Keywords
III-V semiconductors; Q-factor; aluminium compounds; gallium arsenide; integrated optoelectronics; micro-optomechanical devices; microfabrication; micromechanical resonators; optical fabrication; optical resonators; optical waveguides; AlGaAs-AlOx; III-V semiconductor epitaxial structures; buried access waveguides; lateral thermal oxidation; microdisk devices; quality factor; size 250 mum; three-dimensional integration scheme; vertically coupled microdisk resonators; Couplings; Optical device fabrication; Optical resonators; Optical waveguides; Oxidation; Q-factor; AlOx; GaAs; Monolithic integration; optical resonator; oxidation; vertical coupling; whispering gallery modes;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2015.2405031
Filename
7050258
Link To Document