RF parameter extraction of underlap DG MOSFETs: a look up table based approach

In this study, a look up table (LUT) is developed to extract the intrinsic RF parameters of underlap DG MOSFET (UDG-MOSFET) including the non-quasi-static (NQS) effect. The LUT-based approach proposed; can accurately extract complex RF parameters of UDG-MOSFET under different bias conditions, necessary for RF circuit simulations by an interpolation algorithm. The RF parameters including intrinsic gate to drain capacitance (C_gd), gate to source capacitance (C_gs), gate to drain resistance (R_gd), gate to source resistance (R_gs), gate to source transconductance (g_m), drain to source transconductance (g_ds), transport delay (τ_m), capacitance because of DIBL (C_sdx) and inductance because of transport delay (L_sd), cut-off frequency (f_T) and maximum frequency of oscillation (f_max) are extracted using LUT approach. Parameters extracted using LUT are compared with simulated data, considering the NQS effect, and are found in good agreement. For RF circuit applications a low-noise amplifier is designed, with the UDG-MOSFET, operating at a tuned frequency of 10 GHz.