DC-20 GHz N×M passive switches

Author

Schindler, Manfred J. ; Miller, Mary Ellen ; Simon, Keith M.

Author_Institution

Raytheon Co., Lexington, MA, USA

Volume

36

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1604

Lastpage

1613

Abstract

High-order, bidirectional, DC-20-GHz switch networks are discussed. Single-chip 1×2, 1×4, and 2×2 switch MMICs have been demonstrated. Multiple chips have been used to demonstrate 4×4 and 1×16 switches. The switches all use a combination of series and shunt passive FET switching elements. The 1×4 switch is made of a single stage of switching elements, rather than the usual two stages of 1×2 switches. The 2×2 switch is comprised of two stages of 1×2 switches. The multiple-chip 4×4 switch is made of four stages of 1×2 switches (using the 2×2 switch MMICs). Two stages of 1×4 switches are used to make the 1×16 switch

Keywords

MMIC; field effect integrated circuits; semiconductor switches; switching circuits; 0 to 20 GHz; FET switching elements; MMICs; bidirectional type; broadband; monolithic microwave IC; passive switches; series elements; shunt elements; switch networks; wideband type; Attenuation; Capacitance; Distributed amplifiers; Distributed parameter circuits; Equivalent circuits; FETs; Propagation losses; Radio frequency; Switches; Switching circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.17391

Filename

17391