Optimized band-structure design of InGaAsP BRAQWET structures

Author

Dwir, B. ; Monnard, R. ; Glick, M. ; Dupertuis, M.A.

Author_Institution

Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland

Volume

31

Issue

8

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

1477

Lastpage

1483

Abstract

We developed InGaAsP BRAQWET (barrier, reservoir, and quantum-well electron transfer) structures using numerical modeling to optimize the band structure. The main improvement was achieved by including i,n,i,p-doped layers in the barrier, thus decoupling the quantum-well (QW) from the electric field in the barrier. The optimized structures show increased QW movement with applied bias, QW level close to the Fermi level at zero bias, low leakage current and low sensitivity to fabrication tolerances, such as layer thickness and doping levels. The new structures should show improved performance and be easier to manufacture due to their higher tolerances, BRAQWET structures were grown according to the new design by CBE and show low leakage current (10 mA/cm²) and typical band-filling effects at λ=1.5 μm, making them potentially suitable for high-performance modulators

Keywords

III-V semiconductors; band structure; conduction bands; electro-optical modulation; energy gap; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; 1.5 mum; BRAQWET structures; Fermi level; InGaAsP; band structure; band-filling effects; doping levels; fabrication tolerances; high-performance modulators; i,n,i,p-doped layers; layer thickness; leakage current; quantum-well coupling; Absorption; Design optimization; Electrons; Electrooptic modulators; Filling; Leakage current; Low voltage; Photonic band gap; Quantum wells; Reservoirs;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.400400

Filename

400400