Title :
Optimized band-structure design of InGaAsP BRAQWET structures
Author :
Dwir, B. ; Monnard, R. ; Glick, M. ; Dupertuis, M.A.
Author_Institution :
Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland
fDate :
8/1/1995 12:00:00 AM
Abstract :
We developed InGaAsP BRAQWET (barrier, reservoir, and quantum-well electron transfer) structures using numerical modeling to optimize the band structure. The main improvement was achieved by including i,n,i,p-doped layers in the barrier, thus decoupling the quantum-well (QW) from the electric field in the barrier. The optimized structures show increased QW movement with applied bias, QW level close to the Fermi level at zero bias, low leakage current and low sensitivity to fabrication tolerances, such as layer thickness and doping levels. The new structures should show improved performance and be easier to manufacture due to their higher tolerances, BRAQWET structures were grown according to the new design by CBE and show low leakage current (10 mA/cm2) and typical band-filling effects at λ=1.5 μm, making them potentially suitable for high-performance modulators
Keywords :
III-V semiconductors; band structure; conduction bands; electro-optical modulation; energy gap; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; 1.5 mum; BRAQWET structures; Fermi level; InGaAsP; band structure; band-filling effects; doping levels; fabrication tolerances; high-performance modulators; i,n,i,p-doped layers; layer thickness; leakage current; quantum-well coupling; Absorption; Design optimization; Electrons; Electrooptic modulators; Filling; Leakage current; Low voltage; Photonic band gap; Quantum wells; Reservoirs;
Journal_Title :
Quantum Electronics, IEEE Journal of
