• DocumentCode
    810386
  • Title

    Effects of finger width on large-area InGaAs MSM photodetectors

  • Author

    Yuang, R.H. ; Chyi, J.-I.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    32
  • Issue
    2
  • fYear
    1996
  • fDate
    1/18/1996 12:00:00 AM
  • Firstpage
    131
  • Lastpage
    132
  • Abstract
    The authors show that the capacitance of the metal-semiconductor-metal photodetector can be minimised by using a very small or large finger width, with emphasis on the application for the large-area detector. Taking the quantum efficiency into account, the optimum sensitivity of the detector is obtained for the MSM-PD with very slim lingers
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; InGaAs; finger width; large-area MSM photodetectors; metal-semiconductor-metal photodetector; optimum sensitivity; quantum efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960085
  • Filename
    490881
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=810386