Title :
Highly reliable and efficient semiconductor wafer-bonded AlGaInP/GaP light-emitting diodes
Author :
Kish, F.A. ; Vanderwater, D.A. ; DeFevere, D.C. ; Steigerwald, D.A. ; Hofler, G.E. ; Park, K.G. ; Steranka, F.M.
Author_Institution :
Div. of Optoelectron., Hewlett-Packard Co., San Jose, CA, USA
fDate :
1/18/1996 12:00:00 AM
Abstract :
Semiconductor wafer bonding is employed to fabricate very high efficiency transparent-substrate (TS) AlGaInP light-emitting diodes (LEDs) with projected lifetimes in excess of 100000 h under accelerated life test at an ambient temperature of 55°C (70 A/cm2). Furthermore, we demonstrate wafer-bonded TS AlGaInP red LEDs with external quantum efficiencies of 23.7% at 635.6 nm (20 mA, DC, 250°C)
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; life testing; light emitting diodes; semiconductor device reliability; wafer bonding; 20 mA; 23.7 percent; 250 C; 55 C; 635.6 nm; AlGaInP-GaP; fabrication; high efficiency operation; light-emitting diodes; red LEDs; semiconductor wafer bonding; transparent substrate; wafer-bonded LED;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960098
