Fabrication, RE performance, and yield of a combined limiting amplifier and dual-modulus prescalar GaAs IC chip

Author

Geissberger, Arthur E. ; Sadler, Robert A. ; Singh, Hausila P. ; Lewis, Gary K. ; Bahl, Inder J. ; Balzan, Matthew L. ; Griffin, Edward L. ; Drinkwine, Monte J.

Author_Institution

ITT Corp., Roanoke, VA, USA

Volume

36

Issue

12

fYear

1988

Firstpage

1706

Lastpage

1713

Abstract

Production technology details, RF performance, and yield results for an ECL-compatible, L-band, limiting dual-modulus (/10/11) prescalar are presented. Monolithic integration of analog and digital circuit functions is achieved using refractory self-aligned-gate FET technology. When tested with -22-dBm input signal power, one lot of six wafers had a total RF chip yield of 19% with a best-wafer yield of 43%. The average operating frequency was 1.45 GHz (SD=51 MHz) with an average power dissipation of 696 mW (SD=23 mW).<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated logic circuits; scaling circuits; wideband amplifiers; 1.45 GHz; 696 mW; ECL-compatible; GaAs; III-V semiconductor; L-band; RE performance; RF chip yield; analogue/digital circuit functions integration; average operating frequency; average power dissipation; dual-modulus prescalar; fabrication; monolithic integration; production technology; refractory self-aligned-gate FET technology; Circuits; Fabrication; Gallium arsenide; Implants; L-band; Limiting; Microwave FETs; Production; Radio frequency; Resists;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.17403

Filename

17403