• DocumentCode
    810646
  • Title

    GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

  • Author

    Groom, K.M. ; Stevens, B.J. ; Childs, D.T. ; Alexander, R.R. ; Krysa, A.B. ; Roberts, J.S. ; Helmy, A.S. ; Hogg, R.A.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield
  • Volume
    44
  • Issue
    15
  • fYear
    2008
  • Firstpage
    905
  • Lastpage
    906
  • Abstract
    The realisation of GaAs-based self-aligned lasers based on a single overgrowth, and avoiding exposure of AlGaAs during fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical fabrication; quantum well lasers; semiconductor growth; In0.17Ga0.83As; InGaP; double quantum well laser; electrical confinement; fabrication process; opto-electronic confinement layer; self-aligned lasers; single lateral mode emission; single semiconductor overgrowth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20081236
  • Filename
    4568704
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=810646