Determination of intrinsic FET parameters using circuit partitioning approach

Author

Vickes, Hans-Olof

Volume

39

Issue

2

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

363

Lastpage

366

Abstract

A technique useful in extracting intrinsic parameters for a compound semiconductor FET is presented. The technique makes use of a method provided by G. Dambrine et al. (1988). A modified active circuit that accounts for charge accumulation in the conducting channel is presented. The model has the further advantage of using control voltage modeling in agreement with the Curtice convention for large-signal analysis. The equations are presented for each active element as a function of the intrinsic y parameters. Measurements verify the parameter extraction technique with the circuit topology used and show good results

Keywords

equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave devices; Curtice convention; charge accumulation; circuit partitioning; compound semiconductor FET; conducting channel; control voltage modeling; equivalent circuit model; intrinsic FET parameters; large-signal analysis; modified active circuit; parameter extraction technique; Active circuits; Circuit topology; Equivalent circuits; Measurement techniques; Microwave FETs; Microwave devices; Scattering parameters; Symmetric matrices; Transmission line matrix methods; Voltage control;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.102985

Filename

102985